?2013 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt august 2014 absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1. vcc = 600 v, v ge = 15 v, i c = 100 a, r g = 23 $?
inductive load 2. limited by tjmax symbol description ratings unit v ces collector to emitter voltage 1200 v v ges gate to emitter voltage 25 v transient gate to emitter voltage 30 v i c collector current @ t c = 25 o c50 a collector current @ t c = 100 o c25 a i lm (1) clamped inductive load current @ t c = 25 o c 100 a i cm (2) pulsed collector current 100 a i f diode continuous forward current @ t c = 25 o c 50 a diode continuous forward current @ t c = 100 o c 25 a i fm diode maximum forward current 200 a p d maximum power dissipation @ t c = 25 o c 428 w maximum power dissipation @ t c = 100 o c 214 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case -- 0.35 o c / w r jc (diode) thermal resistance, junction to case -- 1.4 o c / w r ja thermal resistance, junction to ambient -- 40 o c / w g c e collector (flange) e c g FGH25T120SMD 1200 v, 25 a field stop trench igbt features ? fs trench technology, positive temperature coefficient ? high speed switching ? low saturation voltage: v ce(sat) =1.8 v @ i c = 25 a ? 100% of the parts tested for i lm (1) ? high input impedance ? rohs compliant applications ? solar inverter, welder, ups & pfc applications. general description using innovative field stop trenc h igbt technology, fairchild?s new series of field stop trench igbts offer the optimum performance for hard switching application such as solar inverter, ups, welder and pfc applications.
?2013 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package r eel size tape width quantity FGH25T120SMD FGH25T120SMD_f155 to-247g03 - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 250 ua 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 ua i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 25 ma, v ce = v ge 4.9 6.2 7.5 v v ce(sat) collector to emitter saturation voltage i c = 25 a , v ge = 15 v t c = 25 o c -1.82.4v i c = 25 a , v ge = 15 v, t c = 175 o c -1.9- v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1mhz - 2800 - pf c oes output capacitance - 105 - pf c res reverse transfer capacitance - 60 - pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 25 a, r g = 23 , v ge = 15 v, inductive load, t c = 25 o c -40- ns t r rise time - 45 - ns t d(off) turn-off delay time - 490 - ns t f fall time - 12 - ns e on turn-on switching loss - 1.74 - mj e off turn-off switching loss - 0.56 - mj e ts total switching loss - 2.30 - mj t d(on) turn-on delay time v cc = 600 v, i c = 25 a, r g = 23 , v ge = 15 v, inductive load, t c = 175 o c -40- ns t r rise time - 48 - ns t d(off) turn-off delay time - 520 - ns t f fall time - 64 - ns e on turn-on switching loss - 2.94 - mj e off turn-off switching loss - 1.09 - mj e ts total switching loss - 4.03 - mj q g total gate charge v ce = 600 v, i c = 25 a, v ge = 15 v - 225 - nc q ge gate to emitter charge - 20 - nc q gc gate to collector charge - 128 - nc
?2013 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 25 a , t c = 25 o c-2.83.7 v i f = 25 a , t c = 175 o c-2.1- v t rr diode reverse recovery time v r = 600 v, i f = 25 a, di f /dt = 200 a/us, t c = 25 o c -60- ns i rr diode peak reverse recovery current - 6.6 - a q rr diode reverse recovery charge - 197 - nc e rec reverse recovery energy v r = 600 v, i f = 25 a, di f /dt = 200 a/us, t c = 175 o c - 330 - uj t rr diode reverse recovery time - 325 - ns i rr diode peak reverse recovery current - 13 - a q rr diode reverse recovery charge - 2113 - nc
?2013 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. saturation voltage vs. case characteristics temperature at variant cur rent level figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 0.02.04.06.08.010.0 0 20 40 60 80 100 10v v ge = 8v 12v 20v t c = 25 o c 15v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 2.0 4.0 6.0 8.0 10.0 0 20 40 60 80 100 20v t c = 175 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 50 a 25 a i c = 15 a common emitter v ge = 15 v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 0.0 1.0 2.0 3.0 4.0 5.0 0 20 40 60 80 100 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 4 8 12 16 20 0 5 10 15 20 i c =15a 25a 50a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c =15a 25a 50a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
?2013 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt typical performance characteristics figure 7. capacitance characteristics figure 8. gate charge characteristics figure 9. turn-on characteristics vs. figure 10. turn-off characteristics vs. gate resistance gate resistance figure 11. swithcing loss vs. figure 12. turn-on characteristics vs. gate resistance collector current 11030 20 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 50 100 150 200 250 0 3 6 9 12 15 common emitter t c = 25 o c 400v 600v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 1428425670 10 100 300 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ] 0 1428425670 0.1 1 10 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ] 0 1428425670 0.1 1 10 100 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ] 0 1020304050 10 100 300 common emitter v ge = 15v, r g = 23 t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a]
?2013 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt typical performance characteristics figure 13. turn-off characteristics vs . figure 14. swithcing loss vs. c o l l e c t o r c u r r e n t c o l l e c t o r c u r r e n t figure 15. load current vs. frequency figure 16. soa characteristics figure 17. forward characteristics figure 18. reverse recovery current 0 1020304050 0.1 1 10 100 common emitter v ge = 15v, r g = 23 t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 0 1020304050 1 10 100 1000 common emitter v ge = 15v, r g = 23 t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 1k 10k 100k 1m 0 50 100 150 200 duty cycle : 50% t c = 100 o c power dissipation =167 w v ce = 600v load current : peak of square wave t c = 100 o c collector current, i c [a] switching frequency, f [hz] 1 10 100 1000 0.01 0.1 1 10 100 500 i c max(pulse) i c max(continuous) 1ms 10ms dc operation single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 012345 1 10 100 t c = 175 o c t c = 25 o c forward voltage, v f [v] forward current, i f [a] 0 1020304050 2 4 6 8 10 12 14 16 di/dt = 100a/ s di/dt = 200a/ s t c = 25 o c t c = 175 o c di/dt = 200a/ s di/dt = 100a/ s reverse recuvery current, i rr [a] forward current, i f [a]
?2013 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt typical performance characteristics figure 19. reverse recovery time figure 20. stored charge figure 21. transient thermal impedance of igbt figure 22. transient thermal impedance of diode 0 1020304050 0 100 200 300 400 500 600 di/dt = 200a/ s di/dt = 100a/ s t c = 25 o c t c = 175 o c di/dt = 100a/ s di/dt = 200a/ s reverse recovery time, t rr [ns] forward current, i f [a] 0 1020304050 0 500 1000 1500 2000 2500 3000 di/dt = 200a/ s di/dt = 100a/ s t c = 25 o c t c = 175 o c di/dt = 100a/ s di/dt = 200a/ s stored recovery charge, q rr [nc] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 0.5 0.01 0.02 0.1 0.05 0.3 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.005 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.3 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
?2013 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH25T120SMD rev. c2 FGH25T120SMD ? 1200 v, 25 a field stop trench igbt mechanical dimensions figure 23. to-247,molded,3 lead ,jedec ab long leads (active) package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_to247-0a3 dimensions in millimeters
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